| Fowler-Nordheim Field Emission: Effects in Semiconductor Nanostructures (Springer Series in Solid-State Sciences, Vol. 170) |  | Authors: Sitangshu Bhattacharya, Kamakhya Prasad Ghatak Publisher: Springer Category: Book
List Price: $169.00 Buy New: $123.33 as of 5/27/2012 13:25 EDT details You Save: $45.67 (27%)
New (14) Used (6) from $123.33
Seller: oddesseyy Sales Rank: 4,877,922
Languages: English (Unknown), English (Original Language), English (Published) Media: Hardcover Edition: 1st Pages: 360 Number Of Items: 1 Shipping Weight (lbs): 0 Dimensions (in): 0 x 0 x 0
ISBN: 3642204929 EAN: 9783642204920 ASIN: 3642204929
Publication Date: January 16, 2012 Availability: Usually ships in 1-2 business days
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Product Description This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.
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